Admissions Open 2025 || CONFERENCE ON SUSTAINABILITY, INNOVATION & TECHNOLOGY (ICSIT 2025)

Dr. Mohankumar N

Professor - Research

  • Education   Ph.D. Electronics & Tele-Communication Engineering (VLSI and Nano Devices), Jadavpur University, Kolkata M.E Electronics & Tele-Communication Engineering (VLSI and Nano Devices), Jadavpur University, Kolkata
Dr. Mohankumar N

NA

NA

  • Specialization-
    1. VLSI, Nano Devices
  • Focus-
    1. Compact modeling of Nano-Scale Semiconductor devices.
    2. Electron transport in gallium oxide-based MOSFET.
    3. Quantum transport in low dimensional systems - MOS device physics.
    4. High Electron Mobility Transistors (HEMTs) for High Power and High-Frequency Applications.
    5. Advanced device architectures for terahertz applications.
    6. GaN-based Transistors for Biomedical Sensing
    7. GaN-based Transistors for energy efficient Lighting applications.
    8. Compact Modeling of Advanced HEMTs
    9. InAs-based transistors for Security applications
    10. Study of GaN-based Flip Chip LEDs with improved Quantum Efficiency.

Journal

No. Information
1 N.Mohankumar et al., “Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing” Engineering Research Express 2024, Vol.6, Issue 2, pp. 1–17. Impact factor: 1.7 (SCI-indexed journal).
2 N.Mohankumar et al., “Drain current sensitivity analysis using a surface potential-based analytical model for AlGaN/GaN double gate MOS-HEMT” Micro and Nanostructures 2024, 185, 207720 Impact factor: 3.1 (SCI-indexed journal).
3 N.Mohankumar et al., “Threshold and surface potential-based sensitivity analysis of symmetrical double gate AlGaN/GaN MOS-HEMT including capacitance effects for label-free biosensing” Physica Scripta 2023, 98(11), 115036 Impact factor: 2.9 (SCI-indexed journal).
4 N.Mohankumar et al., “ Epidemic Propagation With Polarized Opinions Over Signed Network” International Journal of Control, Automation and Systems 2023, 21(11), pp. 3832–3837 Impact factor: 3.2 (SCI-indexed journal).
5 N.Mohankumar et al., “Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing” Current Applied Physics, 2023, 49, pp. 83–90. Impact factor: 2.856 (SCI-indexed journal).
6 N.Mohankumar et al., “Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics”, Silicon Journal, Pages: 1925-1933, Vol 15 (5), 10.1007/s12633-021-00954-3, 2022. Impact factor: 2.941 (SCI-indexed journal).
7 N.Mohankumar et al., “Influence of Barrier with Gate Sinking on the Performance of InAs Composite Channel DMDG-HEMT Devices for High-Frequency Applications”, Silicon Journal, 10.1007/s12633-022-01785-6. Impact factor: 2.941 (SCI-indexed journal).
8 N.Mohankumar et al.,“Compact Modeling of Schottky Gate-all-around Silicon Nanowire Transistors with Halo Doping”, Silicon 14, 1455–1462 (2022). https://doi.org/10.1007/s12633-020-00936-x. Impact factor: 2.941 (SCI-indexed journal).
9 N.Mohankumar et al., “Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications”, IETE Journal of Research, 10.1080/03772063.2021.1929517. Impact factor: 1.877 (SCI-indexed journal).
10 N.Mohankumar et al., “Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT”, J. Electron. Mater. 50, 3569–3579 (2021). https://doi.org/10.1007/s11664-021-08845-4. Impact factor: 1.753 (SCI-indexed journal).
11 N.Mohankumar et al., “Current collapse degradation in GaN High Electron Mobility Transistor by the virtual gate”, Microelectronics Journal, Volume 118, 2021, 105293, ISSN 0026-2692, https://doi.org/10.1016/j.mejo.2021.105293. Impact factor: 1.992 (SCI-indexed journal).
12 N.Mohankumar et al., “A Compact Sensory Platform Based pH Sensor Using Graphene Field Effect Transistor”,  Journal of Nanoscience and Nanotechnology, Volume 21, Number 6, June 2021, pp. 3299-3305(7),  https://doi.org/10.1166/jnn.2021.19318. Impact factor: 0.843 (SCI-indexed journal).
13 N.Mohankumar et al., "Investigation of High-frequency noise in InAs DG-HEMT for millimeter wave application", Micro System Technologies Journal, Published, Impact factor: 1.737. (SCI-indexed journal). https://doi.org/10.1007/s00542-020-04955-x.
14 N.Mohankumar et al., Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications", Silicon Journal Impact factor: 1.281. (SCI-indexed journal), doi.org/10.1007/s12633-020-00503-4.
15 N.Mohankumar et al., " A novel ZnPc nanorod derived piezoelectric nanogenerator for energy harvesting", Physica E: Low-dimensional Systems and Nanostructures Vol.118, April 2020. Impact factor: 3.176. (SCI-indexed journal), doi.org/10.1016/j.physe.2019.113931.
16 N.Mohankumar et al., Performance of Gate Engineered Symmetric Double Gate MOS Devices and circuits for ultra-low power Analog and RF applications", International Journal of Advanced Trends in Computer Science and Engineering, Vol. 9, No. 2, Pages:1239 -1246, April 2020 (Scopus indexed journal).https://doi.org/10.30534/ijatcse/2020/52922020.
17 N.Mohankumar et al., "Design and Implementation of Real-time Amphibious unmanned aerial vehicle system for sowing seed balls in the agriculture field", International Journal on Emerging Technologies”, Vol. 10, No. 1, Pages:1 - 8, March 2020 (Scopus indexed journal).
18 N.Mohankumar et al., " InGaN based HEMT with Quaternary barrier for High Breakdown and RF applications", Journal of Xi'an University of Architecture & Technology (ISSN No: 1006-7930) Volume XII, Issue VI, 2020Page No: 1876- 1883, (Scopus indexed journal). https://doi.org/10.37896/JXAT12.05/1589.
19 N.Mohankumar et al., "Noise Analysis of Gallium Nitride HEMTs for RF Applications ", International Journal of Advanced Science and Technology”, Accepted, (Scopus indexed journal).
20 N.Mohankumar et al., ‘Sheet-carrier density and I-V analysis of In0.7Ga0.3As/InAs/In0.7Ga0.3As/InAs/In0.7Ga0.3As dual channel double gate HEMT for THz applications’, International Journal of Numerical Modelling Electronic Networks, Devices Fields (Wiley), vol. 32, pp. e2625. doi:10.1002/jnm.2625. (Impact factor 0.8). (SCI-indexed journal).
21 N.Mohankumar et al., ‘Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT’, Journal of Computational Electronics (Springer), doi: 10.1007/s10825-019-01365-9. (Impact factor 1.637). (SCI-indexed journal).
22 N.Mohankumar et al., “Analytical modeling of 2DEG with 2DHG Polarization Charge density drain current and Small-signal model of Quaternary AlInGaN HEMTs for Microwave frequency Applications”, International Journal of Numerical Modelling, March 2019. (SCI-indexed journal).
23 N.Mohankumar et al., “Analytical noise characterization of quaternary AlInGaN HEMTs”, Journal of Nanoelectronics and Optoelectronics, Sep 2018. (SCI-indexed journal).
24 N.Mohankumar et al.,“Analytical modeling of 2DEG and 2DHG charge balancing in quaternary Al0.42In0.03Ga0.55N/Al0.3In0.7N HEMTs”, Journal of Computational Electronics, https://doi.org/10.1007/s10825-018-1164-2. (SCI-indexed journal).
25 N.Mohankumar et al., “Hetero Structure PNPN Tunnel FET: Analysis of Scaling Effects on Counter Doping’, Applied Surface Science, February 2018. https://doi.org/10.1016/j.apsusc.2018.01.274. Impact factor: 6.58 (SCI-indexed journal).
26 N.Mohankumar et al., “Radiometric Analysis of Ankle Edema via RZF Antenna for Biomedical Applications", International Journal of Wireless Personal Communications, Vol. 80, Number 3, Feb 2018. Impact factor: 0.951. (SCI-indexed journal).
27 N.Mohankumar et al., "Comparative assessment of InGaAs sub-channel and InAs composite channel Double gate (DG)-HEMT for Sub-millimeter wave applications", AEU - International Journal of Electronics and Communications, Vol. 83, Pages 462-469, January 2018. Impact factor: 1.147. (SCI-indexed journal).
28 N.Mohankumar et al., "Noise Characterization of Enhancement-mode AlGaN Graded barrier MIS-HEMT Devices", Superlattices and Microstructures, Vol. 112, Pages 604-618, December 2017. Impact factor: 2.123. (SCI-indexed journal).
29 N.Mohankumar et al., "Investigation of 6T SRAM memory circuit using high-k dielectrics based nanoscale junctionless transistor" Superlattices and Microstructures Vol. 104, pp.470-476, March. 2017. Impact factor: 2.123. (SCI-indexed journal). (Cited by:2).
30 N.Mohankumar et al., "Simulation of InGaAs Sub-channel DG-HEMT for analog/RF application", International Journal of Electronics, Taylor and Francis journal, pp. 1-11, Sep. 2017., Impact factor: 0.55. (SCI-indexed journal).
31 N.Mohankumar et al., “In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel Double Gate (DG)-HEMT Devices for High-Frequency Applications”, Journal of computational electronics, Vol. 16, issue. 3, pp. 732-740, Sep. 2017. Impact factor: 1.526. (SCI-indexed journal).
32 N.Mohankumar et al., “Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit”. Int J Numer Model. pp. 1-15; Vol. e2276, August 2017, Impact factor: 0.68. (SCI-indexed journal).
33 N.Mohankumar et al., “Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications”, PHYSICA E Journal, pp. 23-29, Vol. 92, Aug. 2017. Impact factor: 1.9. (SCI-indexed journal).(Cited by:2)
34 N.Mohankumar et al., “Analysis and Impact of Al mole concentration „x‟ in Double Heterojunction AlGaN with Source and Gate Field plated HEMT for High breakdown and High-Frequency applications” Global Journal of Pure and Applied Mathematics (GJPAM), Vol. 13, no. 10, pp. 7339-7352, (2017). Impact factor: 0.61.
35 N.Mohankumar et al., "A Charge Based Compact Physical Model with Unified 2DEG for AlGaN/AlN/GaN MISHEMTs including SCEs". International Journal of Control Theory and Applications, Vol.10, no. 36, pp. 11-29, (2017). Impact factor: 0.61.
36 N.Mohankumar et al., “Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits” Superlattices and Microstructures, Vol. 103, pp. 270-284, Mar. 2017. Impact factor: 2.04. (SCI-indexed journal). (Cited by:3)
37 N.Mohankumar et al., “Characterization of Flicker noise in Dual Material Gate Silicon Nanowire Transistors” Journal of Nanoelectronics and Optoelectronics, Vol. 12, no. 1, pp. 72-75, Jan. 2017. Impact Factor 0.369. (SCI-indexed journal).
38 N.Mohankumar et al., “Context-sensitive trust-based geographic routing in mobile Adhoc networks”, Sadhana- Academy proceedings in engineering science, Vol. 41, issue 11, pp. 1261-1274, Nov. 2016. Impact Factor: 0.349. (SCI-indexed journal). (Cited by:1)
39 N.Mohankumar et al., “Void Aware Position Based Opportunistic Routing for QoS in Mobile Ad Hoc Networks” Journal of Circuits and Systems, 7, 1504-1521, June 2016. (Cited by:1)
40 N.Mohankumar et al., “Subjective Logic-based Trust Model for Geographic Routing in Mobile Adhoc Networks”, Tehnicki vjesnik-technical gazette journal, Vol. 24, no. 4. pp. 1357-1364, May. 2016. Impact Factor: 0.464. (SCI-indexed journal).
41 N.Mohankumar et al., “Network Capacity based Geographical Forwarding for Multimedia Streams over MANETs" Journal of Internet Technology, Vol. 17, no. 3, May. 2016. Impact Factor 0.481. (SCI-indexed journal).
42 N.Mohankumar et al., “Application of L- NAM Speech in Voice Analyser ” Journal of Advances in Natural and Applied Sciences, Vol. 10, no. 5, pp. 172-179, April 2016.
43 N.Mohankumar et al.,, “Steadfast Energy proficient Sensor Node Activation System in Wireless Networks Lifetime Enhancement” Journals of Circuits and Systems, Vol.7, no. 4, pp. 402-416, April 2016. Impact Factor: 0.47.
44 N.Mohankumar et al., “The influence of High-k passivation layer on the Breakdown voltage of Schottky AlGaN/GaN HEMTs” Microelectronics Journal, Vol. 46, Issue 12, December 2015, Pages 1387–1391. Impact Factor 0.924. (SCI-indexed journal). (Cited by:8)
45 N.Mohankumar et al., “Analytical Model of Symmetric Halo Doped DG-Tunnel FET”, Journal of Engineering Science and Technology Review, Vol. 8, no. 4, pp. 125 – 130, November 2015. Impact Factor: 0.93.
46 N.Mohankumar et al., “Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor” Journal of Semiconductors, Vol. 36, No. 6, June 2015. Impact factor: 0.50.(Cited by:1)
47 N.Mohankumar et al., “Modeling of Sheet Carrier Density, DC and Transconductance of Novel InxAl1-XN/GaN-Based HEMT Structures” Advanced Materials Research, Vol. 1105, pp 99-104, May 2015. Impact Factor: 0.23.
48 N.Mohankumar et al., “Threading dislocation degradation with InSb to InSbAs subchannel Double Heterostructures” Electronic Materials Letters. July 2015, Vol. 11, Issue 4, pp 580-585. Impact Factor 1.98. (SCI-indexed journal).
49 N.Mohankumar et al., “A NewThreshold Voltage and Drain Current Model for Lightly / Heavily Doped Surrounding Gate MOSFETs” Journal of Computational and Theoretical Nanoscience (CTN), Vol. 12, no. 9, pp. 2515-2522, Impact Factor 1.032. (SCI-indexed journal).
50 N.Mohankumar et al., “Unique Model of Polarization engineered AlGaN/GaN Based HEMTs for High Power Applications” Journal of Superlattices and microstructures, Vol. 78, pp. 210–223, February 2015. Impact Factor 1.979. (SCI-indexed journal). (Cited by:12)
51 N.Mohankumar et al., “Simulation of Flicker Noise in Gate-All-Around Silicon Nanowire MOSFETs including Interface Traps” Microelectronics Reliability, Vol. 54, Issue 12, pp. 2723–2727, December 2014, (Impact Factor 1.214). (SCI-indexed journal).
52 N.Mohankumar et al., “A Review of Nanoscale Channel and Gate Engineered FINFETs for VLSI Mixed Signal Applications Using Zirconium-di-Oxide Dielectrics” Journal of Engineering Science and Technology Review, Vol. 7, no. 2, pp. 119-124, Jul 2014. Impact factor: 0.93. (Cited by:3)
53 N.Mohankumar et al., “Modeling of Temperature-Dependent Noise in Silicon Nanowire FETs including Self-Heating Effects”, Modelling and simulation Engineering, Hindawi Publication Corporation, Article ID 635803, pp. 7, 2014. Impact Factor: 0.58.
54 N.Mohankumar et al., “Optimization and characterization of Gate Electrode Dependent Flicker Noise in Silicon Nanowire Transistors” Journal of Electrical Engineering & Technology, Vol. 9, No.4, pp. 1343-1348, 2014. Impact Factor 0.579. (Cited by:1)
55 N.Mohankumar et al., “An Effective Stateless QOS Routing for Multimedia Applications in MANET" International Journal of Wireless and Mobile Computing, Vol. 7, Issue 5, pp. 456-464, Sep. 2014. Impact Factor: 0.69.
56 N.Mohankumar et al., “Wireless Video Transmission Over UWB Channel Using Fuzzy Based Rate Control Technique” Journal of Theoretical and Applied Information Technology, Vol. 60, No.3. pp. 491-503, Feb. 2014. Impact Factor: 0.33.
57 N.Mohankumar et al., “Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs” Journal of Microelectronics Reliability, Vol. 54, issue 6-7, pp. 1137-1142, Jan 2014. Impact Factor: 1.41. (SCI-indexed journal). (Cited by:12)
58 N.Mohankumar et al., “Multi-Level Trust Architecture For Mobile Adhoc Networks Based On Context-Aware” Journal of Theoretical and Applied Information Technology, Vol. 59, no.2, pp. 275-290, Jan. 2014. Impact Factor: 0.33.
59 N.Mohankumar et al., “Modeling of Sheet carrier density and Microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT Devices”, Journal of Solid State Electronics, Vol. 91 pages 44–52, (2014). Impact Factor 1.514. (SCI-indexed journal). (Cited by:11)
60 N.Mohankumar et al., “Modeling of Sheet carrier density and DC characteristics in Spacer based AlGaN/AlN/GaN HEMT Devices”, Journal of Superlattices and microstructures, Vol. 64, pp. 470–482, (2013). Impact Factor 1.979. (SCI-indexed journal). (Cited by:8)
61 N.Mohankumar et al., “A New Approach to Extract the RF Parameters of Asymmetric DG MOSFET with NQS Effect”, Journal of Semiconductors- IOP Publishers. Vol. 34, no. 11, Nov. 2013. Impact Factor: 0.5.(Cited by:1)
62 N.Mohankumar et al., “Influence of barrier thickness on AlInN/GaNUnderlap DG MOSFET device performance”, Superlattices and Microstructures, Vol. 60, pp. 47-59, 2013. Impact Factor 1.979. (SCI-indexed journal), (Cited by: 14).
63 N.Mohankumar et al., “Prolonging the Lifetime of Wireless Networks Using an Optimal Cluster Head Selection Technique Adopted Node Activation Protocol”, Przeglad Elektrotechniczny, Impact Factor 0.244.
64 N.Mohankumar et al., “An Optimal Cluster Head Selection Technique Adopted Node Activation Protocol for Lifetime Improvement in Wireless Sensor Networks” International Review on Computers and Software, Vol. 8, No.6, June 2013. (Cited by:2)
65 N.Mohankumar et al., “Proficient Node Scheduling Protocol for Homogeneous and Heterogeneous Wireless Sensor Networks” International Journal on Distributed Sensor Networks, 2013, Article ID 826482. Impact Factor 0.923. (SCI-indexed journal). (Cited by:3)
66 N.Mohankumar et al., “Performance assessment of gate material engineered AlInN/GaNUnderlap DG MOSFET for enhanced carrier transport efficiency” Superlattices and Microstructures, Vol. 60, pp.10-12. Impact Factor 1.979. (SCI-indexed journal),(Cited by: 14).
67 N.Mohankumar et al., “A 2-D SurfacePotential Based Threshold Voltage Model for Short Channel Asymmetric Heavily Doped DG MOSFETs” accepted in International Journal of Numerical Modelling: Electronic Networks, Devices, and Fields, Vol. 27, no. 4, July/August 2014, Pages 682-690. Impact Factor 0.629. (SCI-indexed journal). (Cited by:4)
68 N.Mohankumar et al., “2DEG charge density based drain current model for nano-scale AlInGaN/AlN/GaN HEMT Devices”, Springer Journal, 2013. (SCI-indexed journal). (Cited by:4)
69 N.Mohankumar et al., “Nanoscale channel engineered double gate MOSFET for mixed-signal applications using high-k dielectric”, International Journal of circuit theory and Applications, Vol. 41, Issue 6, pp. 608–618, June 2013. (Impact Factor 1.21), (Cited by: 13)
70 N.Mohankumar et al., “Flicker and Thermal noise in an n-channel underlap DG FinFET in a weak inversion region”, Journal of semiconductors, Vol. 34, No.2, Feb.2013.(Cited by:3)
71 N.Mohankumar et al., “Impact of gate length and barrier thickness on the performance of InP/InGaAs based Double Gate Metal–Oxide-Semiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET)”, Journal of Superlattices and Microstructures, Vol. 55, 2013, pp.8-15. (Impact Factor 1.979). (SCI-indexed journal).
72 N.Mohankumar et al., “Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaNHEMT”, Superlattices and Microstructures, vol54, 2013, pp.188-203. (Impact Factor 1.979), (SCI-indexed journal). (Cited by:4)
73 N.Mohankumar et al., “Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET”, Journal of semiconductors, Vol 33, No.12, Dec.2012.(Cited by: 17).
74 N.Mohankumar et al., “Sub-threshold performance of gate engineered FinFET devices and circuit with high-k dielectrics”, International Journal of Microelectronics Reliability, Vol. 53, Issue 3, Mar. 2013, pp. 499–504. (Impact Factor 1.214). (SCI-indexed journal), (Cited by: 22).
75 N.Mohankumar et al., “Physics-based Charge and drain current model for AlGaN/GaN HEMT Devices”, Journal of Electron Devices, Vol. 14,2012, pp. 1155-1160. (SCI-indexed journal). (Cited by:2)
76 N.Mohankumar et al., “Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in III-V heterostructure under lap DG MOSFET”, Physica E, Vol. 46, 2012, pp. 61-67. (Impact Factor 1.856) (SCI-indexed journal). (Cited by:8)
77 N.Mohankumar et al., “Comparative assessment of III-V Heterostructure and silicon Underlap double gate MOSFETs”, Journal of Physics of semiconductors, Vol.46, No.10,2012, pp.1299-1303. (SCI-indexed journal) (Cited by:7)
78 N.Mohankumar et al., “Subthreshold Analysis of Nanoscale FinFETs for Ultra Low Power Application using High-k Materials”, International Journal of Electronics, Volume 100, Issue 6, 2013. (Impact Factor 0.751), (SCI-indexed journal). (Cited by:16).
79 N.Mohankumar et al., “Subthreshold analog/RF performance of underlap DG-FETs with asymmetric source/drain extensions”, Microelectronics Reliability, Volume 52, Issue 11, November 2012, Pages 2572–2578. (Impact Factor 1.214), (SCI indexed journal), (Cited by: 19).
80 N.Mohankumar et al., “A surface potential based drain current model for asymmetric double gate MOSFETs”, Solid State Electronics, Vol. 56, Issue 1, Feb. 2011, pp. 148-154. (Impact Factor 1.514) (SCI-indexed journal). (Cited by:8)
81 N.Mohankumar et al., “Influence of Channel and Gate Engineering on the Analog and RF Performance of DGMOSFETs,” published in IEEE Transactions on Electron Devices, Vol.57, Issue 4, April 2010, PP.820-826. (Impact Factor 2.358), (SCI-indexed journal), (Cited by: 95).
82 N.Mohankumar et al., “Investigation of Novel Attributes of Single Halo Dual-Material Double Gate MOSFETs for Analog/RF Applications”, published in Micro Electronics Reliability, Volume 49, Issue 12, December 2009, Pages 1491-1497. (Impact Factor 1.214), (SCI-indexed journal), (Cited by: 31).
83 N.Mohankumar et al., “Performance and Optimization of Dual Material Gate (DMG) Short Channel BULK MOSFETs for Analog/Mixed Signal Application”, International Journal of Electronics, Vol. 96, No.6, pp. 603-611, June 2009. (Impact Factor 0.751), (SCI-indexed journal). (Cited by:7)
84 N.Mohankumar et al., “Polarization and Breakdown Analysis of AIGaN Channel HEMTs with AIN Buffer” International Journal of Condensed Matter Physics, Jan 2015. (SCI-indexed journal).

Conferences

No. Information
1 Mohankumar N., et al. “User-Centric Drink Customization with Cloud-Powered Collaborative Filtering with Raspberry Pi Integration” Proceedings of 11th International Conference on Reliability, Infocom Technologies and Optimization (Trends and Future Directions), ICRITO 2024, 2024.
2 Mohankumar N., et al. “A Distributed Data Mining and Cloud Analysis for Predictive Gas Level, Dynamic Booking, and Smart Energy Optimization” International Conference on Advances in Data Engineering and Intelligent Computing Systems, ADICS 2024, 2024.
3   Mohankumar N., et al., “Random Forest Predictive Model for Ventilator-Associated Pneumonia Prediction with IoT Data Analytics” 2024 International Conference on Advances in Data Engineering and Intelligent Computing Systems, ADICS 2024, 2024
4 Mohankumar, N., et al., “Cloud-Enabled
5 Isolation Forest for Anomaly Detection in UAV-Based Power Line Inspection
6 ” Proceedings of the 2nd IEEE International Conference on Networking and Communications 2024, ICNWC 2024, 2024
7 Mohankumar N., et al. “CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing” Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022, 2022.
8 Mohankumar N., et al., “Unified Surface Potential Based Analytical Modeling of Symmetrical Double Gate AlGaN/GaN MOS-HEMT for Label-Free Bio-Sensing” Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022, 2022.
9 Mohankumar N., et al. “Analytical modeling of Current Spreading Length in Flip chip GaN LEDs ”, Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022, 2022.
10 Mohankumar N., et al. “Effective Parametric Image Sequencing Technology with Aggregate Space Profound Training” Journal of Physics: Conference Series, 2021, 1964(6).
11 Mohankumar N., et al. “VLSI based Implementation of Channel oriented ICA Processor for Biomedical systems” Journal of Physics: Conference Series, 2021, 1964(6).
12 Mohankumar N., et al. “Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials” Lecture Notes in Networks and Systems, 2021.
13 Mohankumar N., et al. “Exploration on WEDM process parameters effect on LM13 alloy and LM13/SiC composites using Taguchi method” Materials Today: Proceedings, 2021.
14 Mohankumar N., et al. “Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor” Proceedings of the 4th International Conference on Trends in Electronics and Informatics, ICOEI 2020, 2020.
15 Mohankumar N., et al. “Analysis of Self Checking and Self Resetting Logic in CLA and CSA Circuits Using Gate Diffusion Input Technique” Proceedings of the 2nd International Conference on Smart Systems and Inventive Technology, ICSSIT 2019.
16 Mohankumar N., et al. “Performance Analysis of Enhancement Mode Composite Channel MOSHEMT Device for Low Power Applications” Proceedings of the 2019 International Conference on Advances in Computing and Communication Engineering, ICACCE 2019.
17 Mohankumar N., et al. “Noise Characterization of InAs Based DG-HEMT Devices for RF Applications” Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018.
18 Mohankumar N., et al. “Recessed Mg-doped P-type In0.2Ga0.8N cap Gate AlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications”, Inventive Computation Technologies (ICICT), Jan. 2017.
19 Mohankumar N., et al. “Investigation of the performance of InAsSb based high electron mobility transistors (HEMTs)” Devices for Integrated Circuit (DevIC), Oct. 2017.
20 Mohankumar N., et al. “Effect of gate length on the performance of InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices”, Devices for Integrated Circuit (DevIC), Oct. 2017.
21 Mohankumar N., et al. “DC, RF and noise figure analysis of p+ In0.2Ga0.8N cap gate AlGaN DH-HEMT”, Devices for Integrated Circuit (DevIC), Oct. 2017.
22 Mohankumar N., et al. “Analysis of noise performance in InAs DG-MOSHEMT”, Devices for Integrated Circuit (DevIC), Oct. 2017.
  • Books-

    1. Editors: Dr.N.Mohankumar

      Book Title: Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications

      eBook ISBN: 9781003093428 | DOI: 10.1201/9781003093428

      Edition: 1st Edition | Published Date:21-09-2021

      Publisher: CRC Press, Taylor & Francis Group, 2021. (SCOPUS & Web of Science)

  • Book Chapters-

    1. Authors: Dr. N.Mohankumar

      Chapter Name: “Device Simulation using ISE TCAD”

      Book Title: Technology Computer Aided Design: Simulation for VLSIMOSFET
      eBook ISBN:       9781315216454 | DOI: 10.1201/9781315216454

      Edition: 1st Edition | Published Date: 2013

      Publisher: CRC Press, Taylor & Francis Group, 2021. (SCOPUS & Web of Science)

Patent

Sr. No Title of Invention Design No Date of Publish Application Status
1 An Intelligent Indian Sign Language Recognition System with Hybrid Classification Approach Using NAM 201741036635 27/10/2017 Published

Project

  • Project Title: Study of advanced MOSFETs in Nano regime

    Principal Investigator: Dr.N.Mohankumar

    Amount: 6,00,000

    Status: Completed

    Funding Agency: AICTE, India.

  • Certified from Nvidia DLI Fundamentals of Accelerated Computing with CUDA C/C++and accelerating CUDA C++ Applications with multiple GPUs
  • Received Funding from AICTE through MODROBS Scheme for Rs. 30,00,000/- in the year 2013
  • Career Award for young teachers (CAYT) from AICTE – Delhi for the year 2012 – 2014 with Rs. 6,00,000 /-(Completed)
  • Invited as a Visiting Professor at TOKYO INSTITUTE OF TECHNOLOGY,JAPAN for one month with Rs. 5,00,000/-
  • Invited as a Research Professor at NEW JERSEY INSTITUTE OFTECHNOLOGY, USA for two months. Rs. 4,00,000/-
  • Invited as a collaborator for advance research at NATIONAL CHAIO TUNGUNIVERSITY, TAIWAN for two Weeks. Rs. 3,00,000/-
  • Grant-in-aid for organizing an international workshop from the Scientific and Engineering Research Board, Department of Science and Technology, Delhi for the year 2011-12 with Rs.1,00,000/-
  • Grant-in-aid for organizing an international workshop from the Council ofScientific and industrial research for the year 2011-12 with Rs 50,000/-
  • IEEE International Minicolloquia at TCE, Madurai funding received from IEEE EDS Head Quarters US $ 5000 in 2014
  • IEEE International Minicolloquia at SRIT, Coimbatore funding received from IEEE EDS Head Quarters US $ 5000 in 2013
  • IEEE International Minicolloquia at DSCE, Madras funding received from IEEE EDS Head Quarters US $ 5000 in 2013
  • IEEE International Minicolloquia at SKP Engineering College, Tiruvannamalai funding received from IEEE EDS Head Quarters US $ 5000 in 2014
  • IEEE EDS Chapter Fund at SKP Engineering College, Tiruvannamalai funding received from IEEE EDS Head Quarters US $ 8000 from (2010 – 2017)

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